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| Semiconductor IRFAC40, IRFAC42 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly Developmental Type TA17426. BRAND IRFAC40 IRFAC42 January 1998 * 6.2A and 5.4A, 600V * rDS(ON) = 1.2 and 1.6 * Repetitive Avalanche Energy Rated * Simple Drive Requirements * Ease of Paralleling * Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER IRFAC40 IRFAC42 PACKAGE TO-204AA TO-204AA Symbol D NOTE: When ordering, include the entire part number. G S Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1997 File Number 2156.2 5-1 IRFAC40, IRFAC42 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFAC40 Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 3) (Figures 15, 16) . . . . . . . . . . . . . . . EAS Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 600 600 6.2 3.9 25 20 125 1.0 570 -55 to 150 300 260 IRFAC42 600 600 5.4 3.4 22 20 125 1.0 570 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS VGS = 0V, ID = 250A (Figure 10) VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V TJ = 125oC MIN 600 2.0 TYP MAX 4.0 25 250 UNITS V V A A Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 4) IRFAC40 IRFAC42 Gate to Source Leakage Drain to Source On Resistance (Note 2) IRFAC40 IRFAC42 Forward Transconductance (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge ID(ON) VDS > ID(ON) x rDS(ON) MAX, VGS = 10V 6.2 5.4 100 A A nA IGSS rDS(ON) VGS = 20V VGS = 10V, ID = 3.4A (Figures 8, 9) - gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd VGS = 10V, ID = 6.2A, VDSS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature VDS 50V, ID = 3.4A (Figure 12) VDD = 0.5V x Rated BVDSS, ID 6.2A, RG = 9.1, RL = 47, VGS = 10V (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature 4.7 - 0.97 1.2 70 13 18 55 20 40 1.2 1.6 20 27 83 30 60 S ns ns ns ns nC - 5.5 20 - nC nC 5-2 IRFAC40, IRFAC42 Electrical Specifications PARAMETER Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL CISS COSS CRSS LD Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances D LD G LS S TEST CONDITIONS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) MIN - TYP 1300 160 30 MAX - UNITS pF pF pF - 5.0 - nH Internal Source Inductance LS Measured From The Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad - 13 - nH Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA Free Air Operation - - 1.0 30 oC/W oC/W Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX 6.2 25 UNITS A A S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge NOTES: VSD trr QRR TJ = 25oC, ISD = 6.2A, VGS = 0V, (Figure 13) TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/s TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/s 200 1.8 450 3.8 1.5 940 7.9 V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 16mH, RG = 25, peak IAS = 6.8A. See Figures 15, 16. 5-3 IRFAC40, IRFAC42 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) Unless Otherwise Specified 10 8 0.8 0.6 0.4 0.2 0 6 IRFAC40 4 IRFAC42 2 0 50 100 150 0 25 50 TC, CASE TEMPERATURE (oC) 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 ZJC, TRANSIENT THERMAL IMPEDANCE (oC/W) 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE PDM t1 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-4 10-3 10-2 0.1 1 10 0.001 10-5 t1, RECTANGULAR PULSE DURATION (s) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 100 IRFAC40 ID, DRAIN CURRENT (A) IRFAC42 10 IRFAC40 IRFAC42 OPERATION IN THIS REGION IS LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) 10s 100s 1ms 10 VGS = 10V VGS = 6.0V VGS = 5.5V 8 80s PULSE TEST 6 VGS = 5.0V 4 1 TC = 25oC TJ = MAX RATED SINGLE PULSE 0.1 1 102 10ms 2 VGS = 4.5V VGS = 4.0V DC 103 104 0 0 60 120 180 240 VDS, DRAIN TO SOURCE VOLTAGE (V) 300 10 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 5-4 IRFAC40, IRFAC42 Typical Performance Curves 10 80s PULSE TEST 8 Unless Otherwise Specified (Continued) VGS =10V 10 VGS = 6.0V VGS = 5.5V VDS 100V 80s PULSE TEST ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1 6 VGS = 5.0V 4 0.1 TJ = 150oC TJ = 25oC 2 VGS = 4.5V VGS = 4.0V 0 0 3 6 9 12 VDS, DRAIN TO SOURCE VOLTAGE (V) 15 0.01 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 FIGURE 6. SATURATION CHARACTERISTICS rDS(ON), DRAIN TO SOURCE ON RESISTANCE FIGURE 7. TRANSFER CHARACTERISTICS 5 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 80s PULSE TEST 4 3.0 ID = 3.4A VGS = 10V 2.4 3 VGS = 10V VGS = 20V 1.8 2 1.2 1 0.6 0 0 6 12 18 ID, DRAIN CURRENT (A) 24 30 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A 3000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD CISS 1.15 C, CAPACITANCE (pF) 2400 1.05 1800 0.95 1200 COSS 0.85 600 CRSS 0.75 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 TJ, JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 5-5 IRFAC40, IRFAC42 Typical Performance Curves 10 gfs, TRANSCONDUCTANCE (S) VDS 100V 80s PULSE TEST Unless Otherwise Specified (Continued) 100 TJ = 25oC ISD, SOURCE TO DRAIN CURRENT (A) 8 TJ = 150oC 10 TJ = 150oC TJ = 25oC 6 4 1 2 0 0.1 0 2 4 6 ID, DRAIN CURRENT (A) 8 10 0 0.3 0.6 0.9 1.2 VSD, SOURCE TO DRAIN VOLTAGE (V) 1.5 FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 20 VGS, GATE TO SOURCE VOLTAGE (V) ID = 6.2A 16 VDS = 120V 12 VDS = 240V VDS = 360V 8 4 0 0 12 24 36 48 60 Qg(TOT), TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 6-6 IRFAC40, IRFAC42 Test Circuits and Waveforms VDS tP IAS VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG + BVDSS L VDS VDD VDD 0V IAS 0.01 0 tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON td(ON) tr VDS RL 90% tOFF td(OFF) tf 90% + RG DUT - VDD 0 10% 90% 10% VGS 0 10% 50% PULSE WIDTH 50% VGS FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR VDS (ISOLATED SUPPLY) VDD Qg(TOT) VGS 12V BATTERY 0.2F 50k 0.3F SAME TYPE AS DUT Qgs Qgd D G DUT 0 VDS IG(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS 5-7 |
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